Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Liverpool John Moores University
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Output 0 of 0 in the submission
Article title
New insights into defect loss, slowdown, and device lifetime enhancement
Type
D - Journal article
Title of journal
IEEE Transactions on Electron Devices
Article number
-
Volume number
60
Issue number
1
First page of article
413
ISSN of journal
0018-9383
Year of publication
2013
URL
-
Number of additional authors
6
Additional information
* The first paper ever to introduce the new concepts for reliability of MOSFETs: defect losses and slowdown. It breaks the mind-set of researchers in this area that the defects themselves are always reliable by demonstrating that defects can be lost.
* Significant because it, for the first time, reports that the losses and slowdown enhance device lifetime by a factor of 2.6~4.3.
* The results were disseminated to the industrial research consortium based at IMEC and verified by IMEC researchers (Dr. B. Kaczer, Principal scientist, IMEC, email: Kaczer@imec.be) for lifetime enhancement.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
