Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Sheffield Hallam University
Article title
Fermi level pinning and effects on CuInGaSe2-based thin-film solar cells
Type
D - Journal article
Title of journal
Semiconductor Science and Technology
Article number
-
Volume number
24
Issue number
5
First page of article
055016
ISSN of journal
1361-6641
Year of publication
2009
Number of additional authors
0
Additional information
This paper reveals the Fermi level pinning occurring in CuInGaSe2 based solar cells and contributes to the understanding of the solid state physics principles behind this device. This article article was highlighted by the Journal SST as one of the most downloaded papers for its year. It was one of the outputs that resulted from a 3-year DTI-funded project in collaboration with UK industries (Ionotec and Pilkington Group). The new science disseminated in this paper led to invitations to deliver plenaries and keynote speeches at several international conferences.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
