Output details
15 - General Engineering
University of Warwick
Article title
Characterization of n-n Ge/SiC heterojunction diodes
Type
D - Journal article
Title of journal
Applied Physics Letters
Article number
112104
Volume number
93
Issue number
11
First page of article
-
ISSN of journal
0003-6951
Year of publication
2008
URL
-
Number of additional authors
9
Additional information
This publication was the catalyst for several years of interdisciplinary collaborative research between the University of Warwick’s physics and engineering departments, and the National Microelectronics Centre (CNM), the largest public microelectronics research and development centre, in Spain. US patent 20110062450 was filed pertaining to the novel combination of semiconductors outlined in this paper. Three further papers from the same collaboration have followed using these heterojunction devices and concepts, whilst it has inspired work from groups in Brazil (DOI: 10.1063/1.4733569) and from the University of South Florida (DOI: 10.1088/0022-3727/42/2/025301).
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
