Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Sheffield : A - Electronic and Electrical Engineering
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Article title
Avalanche Gain and Energy Resolution of Semiconductor X-ray Detectors
Type
D - Journal article
Title of journal
IEEE Transactions on Electron Devices
Article number
-
Volume number
58
Issue number
6
First page of article
1696
ISSN of journal
15579646
Year of publication
2011
URL
-
Number of additional authors
6
Additional information
A new realistic model for X-ray avalanche photodiodes was reported. We showed that conventional understanding of avalanche gain (which amplifies the signals) being accompanied by severely degraded energy resolution are flawed, and that X-ray avalanche photodiodes is more attractive than previously thought. The work has since led to an EPSRC grant (EP/I010920/1, £106k) and is one of 3 themes in another EPSRC grant (EP/K001469/1, £639k). Institute of High Energy Physics, Russia, is collaborating with us to develop X-ray imaging arrays for medical applications.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-