Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Sheffield : A - Electronic and Electrical Engineering
1.55 μm InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer
This publication explains why a GaAsSb buffer is more efficient for growth of InAs/GaAs quantum dot layers emitting at 1550nm wavelength than traditional InGaAs buffers. Stronger plastic relaxation by more dislocations yields higher strain relief and thus smoother surfaces. This concept has been used by laboratories world-wide for several years, however, as long as the mechanism remained unclear, parameters such as growth temperature and pressures could not be optimised. The process has since been routinely used in the National Centre for III/V Technologies to produce smoother buffer layers for light-emitting diodes supplied to users in the whole of the UK.
