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Characterization study of an intensified complementary metal-oxide-semiconductor active pixel sensor

This was the first paper to demonstrate an intensified CMOS active pixel sensor (APS). CMOS APS represent the most advanced optical imaging sensors in common use and are present in state of the art commercial cameras due to their advanced functionality. Intensification leads to high sensitivity at very low light levels, and thereby makes the technology applicable to fields such as night vision, particle image velocimetry, etc. Intensified CCDs (an alternative lower specification technology) are commercially available but an intensified CMOS APS had not at this stage been reported. I was the project PI and lead the 3 institute consortium.