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High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit

This was the first publication to complete the experimental demonstration and analysis of all three core characteristics of theoretically ideal avalanche photodiodes (APDs), and instrumental in defining the new electron APD class. Enabled by novel fabrication development, it demonstrated GHz APDs free from gain-bandwidth product limits, for the first time. This yielded world record gain-bandwidth product values, with profound implications for future high bandwidth optical communication networks, where the usable gain of conventional APDs is limited by gain-bandwidth constraints. Hence this publication shows a route to increasing the data bandwidths on which society now relies, with international significance.