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Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes

The impact ionization characteristics required for a theoretically ideal avalanche photodiode (APD) have been known since the 1960s, however this paper was the first to reported experimental observation of such characteristics in real APDs. The characterization is rigorous and robust, as required for such a significant first report. Since publication there has been significant further research of InAs APDs, including EU, EPSRC, STFC and US funded programs; all this work was initiated by this paper. All follow-on publications have confirmed the findings of this first paper. The work was funded by the MoD and major defense companies Selex and Thales.