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Crystallographic properties and elemental migration in two-stage prepared CuIn1−xAlxSe2 thin films for photovoltaic applications

This work demonstrates a new thin film fabrication technique to increase the solar energy conversion efficiency of CuInSe2 (CIS) photovoltaic cells. The technique widens the band gap of CIS by incorporating aluminium which increases the open circuit voltage while preserving the short circuit current. This output is from the EPSRC SUPERGEN PV21 programme (EP/F029624/1) and involved industrial collaboration with Horiba Jobin Yvon (HJY), Paris. HJY used the output as a catalyst to expand its business in photovoltaics by exhibiting the paper as a successful application of its glow discharge spectroscopy product at PVTC’13 and EUPVSEC’13 (the major international conference).