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Realization of Nearly Single-crystalline, Pyramidal GaN Rod Arrays on Amorphous Glass Substrates

This is the first demonstration of GaN LED growth on an amorphous glass substrate. The key innovation of the work is the promotion of a preferential crystallographic axis during the growth to avoid the formation of a polycrystalline material with grain boundaries, which degrade device operation. This work was highlighted and selected as the cover picture article of the Nature Photonics journal and was reported in many other media, including Chemistry World, Semiconductor Today, PhysOrg, and Laser Focus World.