Output details
15 - General Engineering
University of Hertfordshire
Article title
Electronic properties of homoepytaxial (111) highly Boron-doped diamond films
Type
D - Journal article
Title of journal
Journal of Applied Physics
Article number
054503
Volume number
103
Issue number
5
First page of article
-
ISSN of journal
0021-8979
Year of publication
2009
URL
-
Number of additional authors
7
Additional information
In collaboration with Rolls-Royce and Element Six, this paper describes the outstanding electronic properties of highly-doped CVD diamond, unlike that seen in previous studies. The electronic properties were observed not to undergo a decline with increase of temperature. Good mobility values were achieved at temperatures of 700K; the importance of this development is that a new generation of electronic devices could be built with capability of operating in more extreme environments (much higher temperature) than is today possible.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
