Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Southampton
Growth of Single-Walled Carbon Nanotubes Using Germanium Nanocrystals Formed by Implantation
Significance of output:
Carbon nanotube FETs are being heavily researched by IBM and others for application at the end of the CMOS roadmap. This paper presents a new CMOS-compatible growth process for carbon nanotubes, which enables carbon nanotube devices to be integrated with CMOS. The carbon nanotubes are catalysed using germanium nanoparticles formed by germanium ion implantation, thereby avoiding metal contamination arising from the use of metal catalysts. A key finding is that germanium-catalysed carbon nanotubes are defect-free (no Raman defect band), unlike standard metal-catalysed nanotubes. The research was funded by ESPRC (EP/D041759/1, £573,000, 2006-2009).
