Output details
15 - General Engineering
University of Bristol
Article title
A First Approach to a Design Method for Resonant Gate Driver Architectures
Type
D - Journal article
Title of journal
IEEE Transactions on Power Electronics
Article number
-
Volume number
27
Issue number
8
First page of article
3855
ISSN of journal
0885-8993
Year of publication
2012
Number of additional authors
2
Additional information
Transforming between voltages (e.g. mains voltage to 12V) is extremely common requirement and very high efficiencies can be attained by using "super-junction" MOSFETs. However, power is dissipated in their gate driver circuits, reducing efficiency. Energy recovery circuitry can be used, and much work has been published on this. Paper presents, for first time, comprehensive taxonomical study of possible circuit topologies. In addition to silicon-MOSFET drivers, work yielded circuitry for addressing particular challenges presented by emerging silicon-carbide devices. Work led to McNeill's EPSRC First Grant (EP/K019333/1, £124,921, 2013).
Interdisciplinary
-
Cross-referral requested
-
Research group
F - Electrical Energy Management
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
