Output details
12 - Aeronautical, Mechanical, Chemical and Manufacturing Engineering
Newcastle University
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Article title
Core and valence exciton formation in x-ray absorption, x-ray emission and x-ray excited optical luminescence from passivated Si nanocrystals at the Si L2,3 edge
Type
D - Journal article
Title of journal
Journal of Physics: Condensed Matter
Article number
095005
Volume number
21
Issue number
9
First page of article
-
ISSN of journal
1361-648X
Year of publication
2009
Number of additional authors
7
Additional information
In this work the complete valence and conducting band of isolated Si nanocrystals (1.8nm in diameter) was mapped for the first time using X-ray emission spectroscopy and X-ray absorption spectroscopy at the Synchrotron facility in MAX-Lab, Sweden. Previous work only studied Si nanocrystals embedded in dielectrics. The research has provided new insights into which parameters are important for understanding the luminescence of Si nanocrystals
Interdisciplinary
-
Cross-referral requested
-
Research group
A - Advanced Materials
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
