Output details
15 - General Engineering
Swansea University
Return to search
Output 0 of 0 in the submission
Article title
Simulation Study of Performance for a 20-nm Gate Length In 0.53Ga0.47 As Implant Free Quantum Well MOSFET
Type
D - Journal article
Title of journal
IEEE Transactions on Nanotechnology
Article number
-
Volume number
11
Issue number
4
First page of article
808
ISSN of journal
1536-125X
Year of publication
2012
URL
-
Number of additional authors
6
Additional information
The work summarises the final results of a three-year FP7 STREP project DUALOGIC (€ 9.1M). It combines state-of-the-art simulations including drift-diffusion approach, ensemble Monte Carlo technique, and Non-Equilibrium Green’s Function method with experiment to forecast the performance of a 20 nm gate length InGaAs channel nMOSFET for a future dual-logic CMOS technology. It gives vision and guidance to semiconductor industry in the R&D for digital application how to achieve improvement in performance, functionality and density.
Interdisciplinary
-
Cross-referral requested
-
Research group
C - Electronic Systems Design Centre
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
