Output details
15 - General Engineering
University of Warwick
Characterization of n-n Ge/SiC heterojunction diodes
This publication was the catalyst for several years of interdisciplinary collaborative research between the University of Warwick’s physics and engineering departments, and the National Microelectronics Centre (CNM), the largest public microelectronics research and development centre, in Spain. US patent 20110062450 was filed pertaining to the novel combination of semiconductors outlined in this paper. Three further papers from the same collaboration have followed using these heterojunction devices and concepts, whilst it has inspired work from groups in Brazil (DOI: 10.1063/1.4733569) and from the University of South Florida (DOI: 10.1088/0022-3727/42/2/025301).