Output details
15 - General Engineering
University of Edinburgh (joint submission with Heriot-Watt University)
A study of defect evolution in multi-energy helium implanted monocrystalline and polycrystalline silicon
This paper presents, for the first time, a systematic comparison of helium implantation in Czochralski and polycrystalline silicon. Cavities in silicon formed by the ion implantation of gases are important for the impurity gettering properties of their internal surfaces. The results of this paper are essential to understanding and controlling the cavity formation. The work, part of a previous Alliance (France/British Council) funded collaboration (www.britishcouncil.org/alliform2010_1st_year.doc, www.britishcouncil.org/vi/france-science-alliance-report-guidelines.pdf), resulted in follow-on work: DoI:10.1149/1.2890239. Daniel.alquier@univ-tours.fr is now a member of the Advisory Board for the Smart Microsystems Flagship Project FS/01/02/10 (EPSRC £1.5M).