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Output details

13 - Electrical and Electronic Engineering, Metallurgy and Materials

University of Plymouth

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Output 33 of 36 in the submission
Article title

The properties of epitaxial PMNT thin films grown on SrTiO3 substrates

Type
D - Journal article
Title of journal
JOURNAL OF CRYSTAL GROWTH
Article number
-
Volume number
311
Issue number
1
First page of article
123
ISSN of journal
0022-0248
Year of publication
2008
Number of additional authors
5
Additional information

Optimizing the d33 coefficient in piezoelectric thin films is vital in the design of MEMS and NEMS devices. We showed that using conducting oxides as electrodes significantly increases this coefficient in a previous publication (R.Herdier et al, J. of Crystal Growth,Vol.310,Issue14,1stJuly 2008,P.3299-3302). This paper reports on developing devices with films epitaxially grown on single crystal substrates of STO, and compares the functionality with the same films on silicon substrates. The actuation capability was increased by 50%, as was the dielectric constant, without compromising polarisation properties. Such devices are useful for both MEMS applications and memory devices, such as FRAM.

Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-