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Output details

13 - Electrical and Electronic Engineering, Metallurgy and Materials

University of Manchester : B - Electrical and Electronic Engineering

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Output 141 of 179 in the submission

Article title

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

Type

D - Journal article

DOI

10.1103/PhysRevB.80.165334

Title of journal

Physical Review B

Article number

Volume number

Issue number

First page of article

165334

ISSN of journal

1550-235X

Year of publication

2009

URL

Number of additional authors

Additional information

This modelling paper originated from collaboration with Prof Koenraad (www.tue.nl/en/employee/ep/e/d/ep-uid/19860172/), a leading experimental electron microscopist, and with the University of Sheffield, which synthesised materials. The work has been continued by the TUE (doi: 10.1063/1.4755794, doi: 10.1088/0268-1242/26/6/064007) and has also informed work in Spain (doi: 10.1186/1556-276X-7-653, doi: 10.1063/1.3673563).

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract