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Output details

13 - Electrical and Electronic Engineering, Metallurgy and Materials

University of Manchester : B - Electrical and Electronic Engineering

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Output 135 of 179 in the submission

Article title

Rapid evaluation of doping-spike carrier concentration levels in millimetre-wave GaAs Gunn diodes with hot-electron injection

Type

D - Journal article

DOI

10.1088/0268-1242/25/12/125011

Title of journal

Semiconductor Science and Technology

Article number

Volume number

Issue number

First page of article

ISSN of journal

1361-6641

Year of publication

2010

URL

Number of additional authors

Additional information

Ultra high frequency (77GHz) autonomous cruise control (ACC) systems are now being deployed in the automotive industry for enhanced safety. This paper describes a novel method for fast and accurate evaluation of on-wafer diode device characteristics as used in production systems in cars. This method removes the need for full device fabrication leading to a significant reduction in material characterization cycle time and a high fabrication yield. As a result, e2v ltd has manufactured over 430,000 millimetre-wave Gunn devices for Bosch products, which have been fitted in a large number of BMW and Audi cars (contact details available).

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract