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13 - Electrical and Electronic Engineering, Metallurgy and Materials

Sheffield Hallam University

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Output 14 of 110 in the submission

Article title

Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements

Type

D - Journal article

DOI

10.1016/j.tsf.2011.11.020

Title of journal

Thin Solid Films

Article number

Volume number

520

Issue number

First page of article

3064

ISSN of journal

0040-6090

Year of publication

2012

URL

http://shura.shu.ac.uk/5698/

Number of additional authors

Additional information

GaN is a material used for light-emitting devices (LED) and has a significant commercial interest in this field. Light emission from semiconductors depends on defects in the material, and this paper addresses this crucial subject. Understanding defects in this material will help improve output light from LEDs, and high efficiency solar cells based on Nitrides. This research was funded by the Libyan Government and attracted other scholars to the Group.

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract