Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Sheffield Hallam University
Article title
Ba2Bi1.4Nb0.6O6: a nonferroelectric, high permittivity oxide
Type
D - Journal article
Title of journal
Chemistry of Materials
Article number
-
Volume number
24
Issue number
12
First page of article
2247
ISSN of journal
0897-4756
Year of publication
2012
Number of additional authors
2
Additional information
This paper describes EPSRC (EP/G005001/1)-funded work on Ba2Bi2O6 ceramics which, ordinarily, are semiconductive, therefore unsuitable for capacitive dielectric applications in wireless communication systems. This work shows that chemical doping can successfully turn such semiconductor oxides into useful high permittivity (92) dielectrics. This high value arises from non-centricity of Niobium within the octahedra of this perovskite. Because Ba2Bi1.4Nb0.6O6 ceramics can be manufactured at low temperatures they are extremely suitable for 3D integration of electronic components.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-