Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Bath
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Article title
CFD optimisation of up-flow vertical HVPE reactor for GaN growth
Type
D - Journal article
Title of journal
Journal of Crystal Growth
Article number
-
Volume number
310
Issue number
14
First page of article
3358
ISSN of journal
0022-0248
Year of publication
2008
Number of additional authors
3
Additional information
The modeling work presented in this paper provided a theoretical base for the design of our own HVPE and HVPE/MOCVD hybrid reactors for the efficient growth of III-V compound semiconductors. Three HVPE reactors related patents were generated through this research (US 7906411, CN 101006548, KR 10-1201589). The project involved collaboration with the largest compound-semiconductor equipment manufacturer in the world (Aixtron) and 11 other European partners. A production tool was built based on these modeling results and used by the university spin-out company NanoGaN.
Interdisciplinary
-
Cross-referral requested
-
Research group
A - Advanced Sensor Technologies
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-