Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Surrey
Article title
A Nonlinear Electro-Thermal Scalable Model for High-Power RF LDMOS Transistors
Type
D - Journal article
Title of journal
IEEE Transactions on Microwave Theory and Techniques
Article number
-
Volume number
57
Issue number
2
First page of article
282
ISSN of journal
1557-9670
Year of publication
2009
URL
-
Number of additional authors
-
Additional information
The design of high frequency, high power amplifiers based on LDMOS transistors for RF applications requires a detailed understanding of the role of heat dissipation, and the interplay with electromagnetic phenomena. The development of the world leading capability at Freescale Semiconductor has benefitted from a longstanding research programme dedicated to developing scalable, computational efficient electro-thermal models, the first of which is described in this paper. The model has given rise to 100's of downloadable product models available from Freescale in both Agilent's Advanced Design System and Microwave Office. (http://www.freescale.com/rf/models)
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
