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Output details

9 - Physics

University of Manchester

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Article title

Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics

Type
D - Journal article
Title of journal
Nature Nanotechnology
Article number
-
Volume number
8
Issue number
2
First page of article
100
ISSN of journal
1748-3395
Year of publication
2013
URL
-
Number of additional authors
14
Additional information

Makarovsky and Eaves designed the set-up for low-current measurements, which enabled the precise measurement of the on-off switching ratio of these transistors. Eaves also discussed with Geim and Novoselov the interpretation of the measured device characteristics, and made comments and additions to the first draft of the manuscript.

Interdisciplinary
-
Cross-referral requested
-
Research group
2 - Condensed Matter Division
Citation count
28
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-