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15 - General Engineering

University of Warwick

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Article title

Improved analog performance in strained-Si MOSFETs using the thickness of the silicon-germanium strain-relaxed buffer as a design parameter

Type

D - Journal article

DOI

10.1109/TED.2009.2030721

Title of journal

IEEE Transactions on Electron Devices

Article number

Volume number

Issue number

First page of article

3041

ISSN of journal

0018-9383

Year of publication

2009

URL

Number of additional authors

Additional information

This paper contributed towards a successful grant application with the EPSRC on underpinning power electronic devices (EP/K034804/1). This is a £2 million project on power semiconductors of which the first author is a Co-I. The paper investigated the thermal performance of novel semiconductor devices and was a contributing factor towards further research in thermal considerations in power electronics. The modelling techniques used in the paper contributed towards the base of expertise required for understanding the thermal performance of new electronic materials.

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract