Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University College London
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Article title
Electrically tunable spin injector free from the impedance mismatch problem
Type
D - Journal article
DOI
Title of journal
Nature Materials
Article number
-
Volume number
10
Issue number
9
First page of article
655
ISSN of journal
1476-1122
Year of publication
2011
URL
-
Number of additional authors
7
Additional information
In collaboration with Prof. Saitoh, Tohoku University (Japan), we have carried out the injection of spin currents into semiconductors using a new spin-injection method using magnetic dynamics, i.e. FMR. Spin current generation in semiconductors is a long-standing issue resulting from the impedance mismatch nature of a ferromagnetic metal/semiconductor interface. The new method negates the impedance mismatch and we successfully showed the injection of spins into both p- and n-type GaAs, even at room temperature. After this publication, this technique has been widely used to inject spins into different types of materials, such as Si, graphene and conductive polymers.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
