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13 - Electrical and Electronic Engineering, Metallurgy and Materials
University College London
Electrically tunable spin injector free from the impedance mismatch problem
In collaboration with Prof. Saitoh, Tohoku University (Japan), we have carried out the injection of spin currents into semiconductors using a new spin-injection method using magnetic dynamics, i.e. FMR. Spin current generation in semiconductors is a long-standing issue resulting from the impedance mismatch nature of a ferromagnetic metal/semiconductor interface. The new method negates the impedance mismatch and we successfully showed the injection of spins into both p- and n-type GaAs, even at room temperature. After this publication, this technique has been widely used to inject spins into different types of materials, such as Si, graphene and conductive polymers.