Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Manchester : B - Electrical and Electronic Engineering
Tin-vacancy complex in germanium
Germanium is of intense interest as a channel material for sub 25 nm CMOS technology, exploiting its high carrier mobility. A major bottleneck for development of a Ge based technology concerns the difficulty of dopant activation particularly for n-type dopants. This work identified the microscopic interactions which reduce the Sn donor activation as Sn-Si (vacancy). This finding has contributed to the development by other groups of a novel Sn-Ge rectifier (DOI:10.1109/LED.2012.2212871), to understanding transient enhances diffusion of Sn (DOI:10106/j.msp.2012.06.014), to the development of successful DFT and GCA+U codes for simulation of Sn1-xGex alloy properties (DOI:10.1063/1.3618671), and to diffusion modelling (DOI:10.1063/3653472).
