Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Sheffield : A - Electronic and Electrical Engineering
Characterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a SiCl4/SF6 dry etch recipe
A novel processing method was developed where state of the art contact resistances were achieved using n+ GaN contact layers. The paper added new understanding of the optimisation of GaN contact layers. Key to the full exploitation of this contact layer is the damage limiting etch recipes described in the paper. QinetiQ (Michael.Uren@bristol.ac.uk) incorporated findings in their GaN FET process to make devices more competitive (reduced contact resistance). The methods are being used to reduce the “on-resistance” in a current programme grant (“Si Compatible GaN Power Electronics”) aimed at placing the UK in the forefront of GaN based power electronics.
