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13 - Electrical and Electronic Engineering, Metallurgy and Materials

Newcastle University

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Article title

Anomalous resistive switching phenomenon

Type

D - Journal article

DOI

10.1063/1.4770489

Title of journal

Journal of Applied Physics

Article number

124516

Volume number

112

Issue number

First page of article

ISSN of journal

1089-7550

Year of publication

2012

URL

http://dx.doi.org/10.1063/1.4770489

Number of additional authors

Additional information

This is one of the key outcomes from a project led by Newcastle (EP /H023666, £528,499) with Imperial College (n.alford@imperial.ac.uk), Intel (Bernard.d.capraro@intel.com) and CPI (David.Robbins@uk-cpi.com). Research on metal oxide thin films is an emerging research area at Newcastle. The new resistive switching mechanism (“antipolar”) is important for the understanding of leakage current in semiconductor elements that use SrTiO3 (it is a promising material for inclusion in MOSFET gates and resistive random access memory (RRAM)). A new resistive switching mechanism may also lead to new resistive non-volatile memory device concepts.

Interdisciplinary

Cross-referral requested

Research group

B - Emerging Technologies & Materials (ETM)

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract