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13 - Electrical and Electronic Engineering, Metallurgy and Materials

University of Cambridge

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Output 12 of 131 in the submission

Article title

Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells

Type

D - Journal article

DOI

10.1063/1.3610468

Title of journal

APPL PHYS LETT

Article number

021906

Volume number

Issue number

First page of article

021906

ISSN of journal

0003-6951

Year of publication

2011

URL

Number of additional authors

Additional information

This paper describes a very challenging experiment in which an InGaN quantum-well sample which had been examined in transmission electron microscopy (TEM) was assessed by atom probe. The validity of TEM data on InGaN remains controversial and Compound Semiconductor Magazine described our new data as providing a “compelling” insight into this issue (http://compoundsemiconductor.net/csc/features-details.php?cat=features&id=19734104). Atom-probe expert, Peter Clifton (Peter.Clifton@ametek.com), wrote to Oliver to say “I am very glad that someone has finally published this comparison”.

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract