Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Cambridge
Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire
Demonstrates that SiN(x) interlayers are the most effective technique for reducing the dislocation density of GaN grown on sapphire, by over two orders-of-magnitude. A typical citation is: “The GaN templates contained a SiNx interlayer in order to reduce the TD density (Johnston et al, 2009).” [J Appl Phys 108(2012)013534]. Humphreys and co-workers then filed patents on SiN(x) interlayers for reducing the dislocation density of GaN LEDs on silicon (UK Patent Application Number 1019301.9, International: PCT/GB2011/001474, European: EP2641267) and established two spin-out companies. Plessey acquired these and is now manufacturing LEDs in the UK (see Impact Case Study).
