You are in : Home » Results & submissions » Select UOA » 15 - General Engineering » View submission: University of Edinburgh (joint submission with Heriot-Watt University) » Outputs » Detail

Output details

15 - General Engineering

University of Edinburgh (joint submission with Heriot-Watt University)

Return to search Previous output Next output

Output 19 of 305 in the submission

Article title

A study of defect evolution in multi-energy helium implanted monocrystalline and polycrystalline silicon

Type

D - Journal article

DOI

10.1002/pssc.200881452

Title of journal

Physica Status Solidi (C) Current Topics in Solid State Physics

Article number

Volume number

Issue number

First page of article

1964

ISSN of journal

1610-1634

Year of publication

2009

URL

http://onlinelibrary.wiley.com/doi/10.1002/pssc.200881452/abstract

Number of additional authors

Additional information

This paper presents, for the first time, a systematic comparison of helium implantation in Czochralski and polycrystalline silicon. Cavities in silicon formed by the ion implantation of gases are important for the impurity gettering properties of their internal surfaces. The results of this paper are essential to understanding and controlling the cavity formation. The work, part of a previous Alliance (France/British Council) funded collaboration (www.britishcouncil.org/alliform2010_1st_year.doc, www.britishcouncil.org/vi/france-science-alliance-report-guidelines.pdf‎), resulted in follow-on work: DoI:10.1149/1.2890239. Daniel.alquier@univ-tours.fr is now a member of the Advisory Board for the Smart Microsystems Flagship Project FS/01/02/10 (EPSRC £1.5M).

Interdisciplinary

Cross-referral requested

Research group

A - Manufacturing & Materials

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract