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13 - Electrical and Electronic Engineering, Metallurgy and Materials

University of Leeds

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Output 14 of 64 in the submission

Article title

Design of Ge–SiGe Quantum-Confined Stark Effect Electroabsorption Heterostructures for CMOS Compatible Photonics

Type

D - Journal article

DOI

10.1109/JLT.2010.2081345

Title of journal

Journal of Lightwave Technology

Article number

Volume number

Issue number

First page of article

3273

ISSN of journal

0733-8724

Year of publication

2010

URL

Number of additional authors

Additional information

RWK-3: This paper applies strain engineering to the design of 1.3-1.55µm wavelength Ge-SiGe optical modulators, and represents an important contribution towards realization of silicon-based photonic communications systems. Our designs were grown (Warwick) and fabricated (Surrey) through the £5M EPSRC UK Silicon Photonics programme (EP/F002548, PI:Kelsall, £588,714), with demonstration of the quantum confined Stark effect in Ge/SiGe at 1.3µm (Optics Letters 36, 4158 (2011); J. Applied Physics 112, 123105 (2012)). The work seeded new independent activities at the Universities of Paris and Milan (Optics Letters 37, 3960 (2012)), and a Leeds collaboration with Stanford University (Optics Express 21, 867 (2013)).

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract