Output details
15 - General Engineering
University of Nottingham
Article title
Band offset determination of the GaAs/GaAsN interface using the density functional theory method
Type
D - Journal article
Title of journal
Journal Of Physics: Condensed Matter
Article number
315004
Volume number
20
Issue number
31
First page of article
-
ISSN of journal
0953-8984
Year of publication
2008
URL
-
Number of additional authors
3
Additional information
This work used a completely first principles (ab initio) theoretical calculation to determine the GaAsN/GaAs valence band alignment. Previously, there had been experimental evidence to support both type I (P. Krispin, J. Appl. Phys. 88(7), 2000, 4153-8) and type II (T. Kitatani, Jap. J. Appl. Phys.) alignment and anomalous low-temperature behaviour could be attributed to either localisation or to a small type II band offset. The “dilute nitrides” are technologically important for making O-band (1260-1360nm) lasers on GaAs.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
