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15 - General Engineering
University of Durham
Electrical behavior of memory devices based on fluorene-containing organic thin films
This paper describes a different method to realise organic memories – based on the switching of a resistive element. This technology should provide better scaling than flash memory, particularly beyond the 16 nm node. This paper and the previous one led to invitations to present a tutorial lecture at the 2011 Material Research Society (MRS) Conference in San Francisco (http://www.mrs.org/s11program-q/), to an invited paper at the 2013 MRS meeting (http://www.mrs.org/s13-program-dd/) and to write a review article in the Handbook of Organic Materials for Optical and (Opto) Electronic Devices (ed. O. Ostroverkhove), Woodhead (2013): http://www.woodheadpublishing.com/en/book.aspx?bookID=2494
