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Room temperature photoluminescence at 4.5 µm from InAsN

Incorporation of <3% nitrogen into III-V semiconductors results in a radical reduction of the bandgap and gives a compressively strained alloy (relative to the binary compound). Compressive strain is usually associated with increased bandgap. Hence N incorporation should allow novel devices to be designed using bandgap engineering techniques like strain-balancing. However, above 1% N, inhomogeneous incorporation often results in degradation of material and optical properties. Here, we optimise growth conditions to achieve 2.5% N in InAsN with excellent optical quality indicated by strong photoluminescence up to room temperature. Potential devices range from mid IR light sources/detectors to 1um solar cells.