Output details
15 - General Engineering
University of Warwick
Article title
The impact of parasitic inductance on the performance of silicon-carbide Schottky barrier diodes
Type
D - Journal article
Title of journal
IEEE Transactions on Power Electronics
Article number
-
Volume number
27
Issue number
8
First page of article
3826
ISSN of journal
0885-8993
Year of publication
2012
URL
-
Number of additional authors
3
Additional information
This paper contributed significantly to a successful EPSRC proposal (EP/K008161/1, £125k), “Predictive Reliability Modelling and Characterization of Silicon Carbide Power MOS-Transistors in Grid-Connected Voltage Source Converters”. The first author of the paper is the PI of the project. The paper was presented at the IET Power Electronics Machines and Drives (PEMD) 2012 in Bristol and contributed to industrial collaboration with ALSTOM Grid as project partners in the EPSRC grant. The contact at ALSTOM is Roger Critchley and his email is r.critchley@alstom.com.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
