Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Queen's University Belfast
Article title
Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates
Type
D - Journal article
Title of journal
Journal of Materials Science: Materials in Electronics
Article number
-
Volume number
19
Issue number
2
First page of article
119
ISSN of journal
0957-4522
Year of publication
2008
URL
-
Number of additional authors
6
Additional information
This paper describes the ALD high-k dielectric process established under the EU-funded Nanotec NI centre of excellence, in partnership with the University of Ulster. Close co-operation with the equipment supplier (Oxford Instruments) resulted in a joint ALD conference paper and provided initial results for the development of their ALD product range. Atomic layer deposition is a key technique for ultra-thin coatings in nanoelectronics and hafnium dioxide (HfO2) was chosen as an exemplar. The main application of ALD HfO2 is for advanced MOS gate stacks, and this paper also includes an early report of a high-k gate stack on high-mobility germanium.
Interdisciplinary
-
Cross-referral requested
-
Research group
A - High Frequency Electronics (HFE)
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
