Output details
15 - General Engineering
University of Warwick
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Article title
Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures
Type
D - Journal article
Title of journal
Science and Technology of Advanced Materials
Article number
-
Volume number
13
Issue number
5
First page of article
055002
ISSN of journal
1878-5514
Year of publication
2012
URL
-
Number of additional authors
9
Additional information
Demonstration of suspended crystalline germanium membranes created on a standard Si substrate by a combination of epitaxial growth, simple micro-lithography and anisotropic etching. This new approach to fabricate suspended crystalline structures is still under development and has been led by Myronov. The paper was selected by the editor of STAM as a highlight for 2012. The article followed filing of patent number WO/2012/153112.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
