Output details

Field-effect tunneling transistor based on vertical graphene heterostructures

Eaves used his expertise on charge build-up and electron tunnelling in semiconductor devices to contribute to the analysis and interpretation of the experimental data. This led to a theoretical model which successfully explained the data in terms of the charge distribution in the device under operating conditions, the unique band structure of graphene and the nature of the quantum tunnelling of charged carriers through the boron nitride barrier. He also contributed to the preparation for publication of the manuscript and supplementary information.