Output details
15 - General Engineering
Staffordshire University
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Article title
Series connection of insulated gate bipolar transistors (IGBTs)
Type
D - Journal article
Title of journal
Power Electronics, IEEE Transactions on
Article number
-
Volume number
27
Issue number
4
First page of article
2204
ISSN of journal
0885-8993
Year of publication
2012
Number of additional authors
1
Additional information
The work was focussed on the use of Insulated Gate Bipolar Transistors (IGBTs) which are widely used in switching applications in the majority power electronic circuits and systems. The work was partly sponsored by ALSTOM, UK (A €20 billion multinational corporation with bases in 100 countries and 93,000 employees). Novel techniques were developed and implemented in series connectors of IGBTs for High Voltage Applications.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-