Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Southampton
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Article title
Intrinsic optical gain of ultrathin silicon quantum wells from first-principles calculations
Type
D - Journal article
Title of journal
Physical Review B
Article number
-
Volume number
79
Issue number
23
First page of article
3308
ISSN of journal
1098-0121
Year of publication
2009
Number of additional authors
1
Additional information
Significance of output:
This theoretical paper examines the mechanism of light emission from Si quantum wells, and predicts for the first time that positive optical gain could be obtained from an appropriate crystalline orientation. Subsequent experimental work has verified the theoretical prediction (APL09). This work has led to 3 patent applications [JP2006-120065, JP2007-036328, JP2007-262194] for Hitachi, 2 invited talks [LQE10, Gakushin145], and 1 book chapter written for the review article [Developing Nanosilicon Technology, CMC press] and represents an significant step towards the development of silicon-based lasers.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
