Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Southampton
Integration of gigahertz-bandwidth semiconductor devices inside microstructured optical fibres
Significance of output:
A new direction for our patented technology (WO2005036224; US7799663; WO2005036222), allowing for the deposition of doped semiconductor junctions within optical fibres, resulting in novel photodetector devices with GHz bandwidth performance.
This result was widely reported, including a broadcast interview by dradio.de and involves international collaboration between centres of excellence in materials technology (Penn State, USA) & the optical fibres (ORC, Southampton). This approach is highly versatile in terms of morphology, composition and quality of deposited semiconductor inside the fibre pores & is the culmination of joint funding of £1M since 2007 from EPSRC and $1.5M to Penn State via NSF.
