Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Southampton
Impact of channel constrictions on the formation of multiple tunnel junctions in heavily-doped silicon single electron transistors
Significance of output:
The first experimental study of multiple tunnel junctions (MTJs) naturally formed by random dopant atoms in the geometrically-constricted Si channel of single-electron transistors (SETs). The mechanism of undesirable MTJ formation, which causes uncontrolled variability in the SET characteristics, was revealed for the first time by comparing various constriction patterns systematically. A clear Coulomb oscillation with a single periodicity was demonstrated successfully by fabricating extremely sharp constrictions shorter than the characteristic length of dopant-induced charging islands. This finding was essential to come up with a novel integrated Si spin qubit architecture for the £1M EPSRC project EP/H016872/1 (2010 – 2013).
