Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Southampton
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Output 0 of 0 in the submission
Article title
Improved drive current in RF vertical MOSFETS using hydrogen anneal
Type
D - Journal article
Title of journal
IEEE Electron Device Letters
Article number
-
Volume number
32
Issue number
3
First page of article
279
ISSN of journal
0741-3106
Year of publication
2011
Number of additional authors
6
Additional information
Significance of output:
We worked with Plessey Semiconductor on EPSRC project EP/E012329/1 (£744,000, 2007-2010) to develop low cost 80nm RF vertical MOSFETs using mature 0.5um lithography. This paper shows how our low capacitance Fillet Local Oxidation process (Kunz et al, IEEE Trans, ED50, p1487, 2003) can be combined with a novel low resistance silicidation process to deliver cutting edge AC transistor performance. A record cut-off frequency (a standard figure of merit for analogue transistor performance) of 20GHz was achieved, which is a factor of two higher than the state of the art for 0.5um lithography.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
