Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of York
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Article title
Dember type voltage and nonlinear series resistance of the optical confinement layer of a high-power diode laser
Type
D - Journal article
Title of journal
Journal of Applied Physics
Article number
113108
Volume number
113
Issue number
11
First page of article
1
ISSN of journal
0021-8979
Year of publication
2013
Number of additional authors
1
Additional information
The paper contributes to the understanding and optimisation of high-power laser diodes. In collaboration with A.F. Ioffe Physico-Technical Institute, St. Petersburg, Russia, it is shown analytically that at very high injection levels, doping the waveguide layer leads to almost negligible decrease in its effective resistance. The paper originated following an invited presentation at 2012 IEEE Photonics Society Summer Topical Meeting on High Power Semiconductor Lasers.
Interdisciplinary
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Cross-referral requested
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Research group
C - Physical Layer
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
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