Output details
15 - General Engineering
University of Warwick
Article title
Modulation of the absorption coefficient at 13 μm in Ge/SiGe multiple quantum well heterostructures on silicon
Type
D - Journal article
Title of journal
Optics Letters
Article number
-
Volume number
36
Issue number
21
First page of article
4158
ISSN of journal
0146-9592
Year of publication
2011
URL
-
Number of additional authors
11
Additional information
Demonstration of modulation of the absorption coefficient at the 1.3 um telecommunication wavelength in a Si based device. It represents a major outcome of the EPSRC UK Silicon Photonics project (EP/E065317/1) and has been followed by a further paper in J Appl. Phys. The work was enabled by epitaxial growth of multiple Ge quantum wells with monolayer control within a strained balanced SiGe heterostructure, that has been reported in 5 other journal papers and 10 conferences from the NanoSilicon group within the REF period. The work led to a further EPSRC project on Ge quantum cascade lasers (EP/H025294/1).
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
