Output details
15 - General Engineering
University of Warwick
Article title
Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices
Type
D - Journal article
Title of journal
Applied Physics Letters
Article number
013506
Volume number
97
Issue number
1
First page of article
-
ISSN of journal
0003-6951
Year of publication
2010
URL
-
Number of additional authors
11
Additional information
Significance of alternative dielectric materials is of great importance to our spin-out company Anvil Semiconductors, as Hafnium Oxide is one of the important materials that have the potential to improve the poor performance of the native silicon dioxide (Stuart Le Cornu, Director Anvil Semiconductors, s.lecornu@anvil-semi.co.uk). This paper is the first reported attempt at using this material.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
