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Output details

15 - General Engineering

University of Warwick

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Output 156 of 344 in the submission

Article title

Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition

Type

D - Journal article

DOI

10.1063/1.3449057

Title of journal

Journal of Applied Physics

Article number

124512

Volume number

107

Issue number

First page of article

ISSN of journal

0021-8979

Year of publication

2010

URL

Number of additional authors

Additional information

This work captures a novel way of forming germanium/SiC heterojunctions. It is interdisciplinary in nature and represents collaboration between the Physics and Engineering departments here at Warwick, also incorporating the University of Southampton and Centre Nacional de Microelectrónica in Spain.

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract